SCDEVICE LLC
SBIR Phase II award from National Aeronautics and Space Administration.
Summary
SCDevice LLC received nearly $850,000 from NASA to develop a silicon carbide power transistor that resists radiation damage and operates at voltages up to 600 volts. This Phase II SBIR project aims to create reliable electronics for harsh space environments.
- Amount
- $849,941
- Agency
- National Aeronautics and Space Administration · National Aeronautics and Space Administration
- Program / Phase
- SBIR · Phase II
- NAICS
- 541715 · RESEARCH AND DEVELOPMENT IN THE PHYSICAL, ENGINEERING, AND LIFE SCIENCES (EXCEPT NANOTECHNOLOGY AND BIOTECHNOLOGY)
- Place of performance
- OR
- Period
- 2023-06-06 → 2026-03-31
Technology domains
Microelectronics Space & Satellite Power & Energy
Description
SBIR PHASE II SIC MOSFET WITH RADIATION-RESISTANT GATE OXIDE PERFORMANCE TO 600V