QORTEK INC — National Aeronautics and Space Administration SBIR Phase I: S1

Description

The proposed program addresses the need for a high voltage converter capable of ultra-fast slew rates and be within a small satellite form factor.nbsp; The proposed innovation leverages a Class-E derived topology of converters by combining an RF source (inverter) and an impedance matched rectifier to produce high voltages at efficiencies greater than 95%.nbsp; These efficiencies are possible through the implementation of resonant switching in the topology.nbsp; In addition, by implementing power switching at the MHz to 10s of MHz , the size of the converter can be minimized through the requirement of needing smaller values capacitors and inductors (coreless).nbsp; The required modulator is also simplified in the Class-E design as the single power switch (GaN MOSFET technology) utilizes a ground reference source simplifying the gate driver requirements.nbsp; The modulator will also enable a means to control the output voltage to deliver a linear response to the input command.nbsp; The rectifier stage will satisfy a 25kV output isolation requirement needed by detection instruments.nbsp; The Phase I program will produce a 10kV high voltage supply with the converter implementing a scalable output rectifier such that additional rectifiers added on the output can be placed in series and boost the output voltage.nbsp; As the design matures, we intend to ensure that a path exists for all utilized components to have radiation hardened equivalents to achieve a future rad option.nbsp; At Phase I exit, we will have demonstrated a converter with rectifiers placed in series with the output to achieve the desired closed-loop regulated 10kV target.nbsp;nbsp;