SEMICONDUCTOR POWER TECHNOLOGIES INC — Department of Defense SBIR Phase I: N201-010
SEMICONDUCTOR POWER TECHNOLOGIES INC — SBIR Phase I award from Department of Defense.
- Amount
- $139,939
- Agency
- Department of Defense · Navy
- Program / Phase
- SBIR · Phase I
- Topic
- N201-010
- Solicitation
- 20.1
- NAICS
- —
- Place of performance
- KS
- Period
- 2020-06-10 → 2020-12-14
Description
Narrowband radio frequency emitters, despite their widespread industrial use and need for greater range, have not reached their limit in power output and SWAP-C2 considerations. Standing on a foundation of strong preliminary simulations (see Section IV) the investigators will show that a silicon-based drift step-recovery diode (Si-DSRD) system operated with non-linear reactive components can and will demonstrate all of the N201-010 phase I requirements. The proposed work is a mix of research and development. The research aims to find the limits of DSRD based pulse system frequency modulation that go beyond the phase I requirements while the objective of the development effort is to build, test and demonstrate a transition-capable Si-DSRD system that meets the phase I, and eventually the phase II, specific requirements.