TOYON RESEARCH CORPORATION — Department of Defense STTR Phase I: AF20A-TCSO1
TOYON RESEARCH CORPORATION — STTR Phase I award from Department of Defense.
- Amount
- $49,993
- Agency
- Department of Defense · Air Force
- Program / Phase
- STTR · Phase I
- Topic
- AF20A-TCSO1
- Solicitation
- X20.A
- NAICS
- —
- Place of performance
- CA
- Period
- 2020-03-06 → 2020-06-04
Description
Toyon Research Corporation and the University of Michigan propose to conduct a study on epitaxial GaN growth with Germanium and Silicon donors. Silicon is typically used to dope GaN n-type, but electron concentrations above 3E18 cm-3 result in degraded surface morphology of the GaN. Epitaxial GaN with a variety of electron concentrations will be grown with both types of donors. The epitaxial GaN layers will be analyzed with an atomic force microscope to quantify the RMS surface roughness of each sample. The samples will then be characterized with Lehighton and Hg-CV to quantify the conductivity of the layers of each sample. The goal is to achieve highly conductive films with low RMS surface roughness.