Gigajot Technology, Inc. — National Aeronautics and Space Administration SBIR Phase I: S1
Gigajot Technology, Inc. — SBIR Phase I award from National Aeronautics and Space Administration.
- Amount
- $124,995
- Agency
- National Aeronautics and Space Administration
- Program / Phase
- SBIR · Phase I
- Topic
- S1
- Solicitation
- SBIR_18_P1
- NAICS
- —
- Place of performance
- CA
- Period
- 2018-07-27 → 2019-02-15
Description
<p style="margin-left:0in; margin-right:0in">In this proposed project, we plan to further develop a novel platform image sensor, Quanta Image Sensor (QIS), for future NASA missions, and other scientific and consumer applications. The outcome of this project will be a large-format visible-blind CMOS UV/EUV photon-counting sensor with accurate photon-counting capability. The novel sensor will provide some capabilities that are not available with other high-sensitivity detectors, such as accurate photon-number-resolving, zero dead time, low voltage and power requirements, high spatial resolution, and room temperature operation. These features will benefit multiple future NASA missions such as the ESA-NASA Solar Orbiter, Large UV Optical Infrared Survey Telescope (LUVOIR), and the Habitable Exoplanet Mission (HabEx).</p><p style="margin-left:0in; margin-right:0in">The core of QIS is the specialized CMOS photon-counting pixels, called “jots.” With our patented innovations, jots can accurately count photons without the use of avalanche gain or cooling. The technology was validated in a 1Mpixel prototype. The accurate photon-counting capability was demonstrated with ultra-low read noise and dark current at room temperature. When combined with the existing advanced back-surface passivation techniques and band-pass filters developed for CCDs and standard CMOS image sensors, a visible-blind QIS with high quantum efficiency in UV/EUV wavelengths can be produced.</p><p style="margin-left:0in; margin-right:0in">The ultimate goal of the project is to produce a QIS for high-performance visible-blind photon-counting in the UV/EUV spectral region. The effort in Phase I can provide critical guidance for the prototype design in Phase II. The anticipated results are (1) a detailed manufacturing plan for combining the future QIS products with the advanced back-surface passivation techniques, (2) an optimized jot designed for higher quantum efficiency and less cross-talk especially with short photon absorption depth, and (3) a preliminary plan on modifications required for the radiation hardened detector and circuit design.</p>