NHANCED SEMICONDUCTORS, INC. — National Aeronautics and Space Administration SBIR Phase I: S1

Description

NHanced Semiconductors proposes to design, fabricate, assemble and test an 8k x 8k delta doped 3D Advanced Hybrid Detector (AHD) prototype targeted for the deep to near UV spectrum (90nm ndash; 400nm).nbsp;The detector prototype will contain sixty-four 1024x1024 pixel 268.4mm23D AHD chiplets, tiled on a 200mm interposer wafer in an 8x8 array.We intend to leverage our design experience and our state of the art integration technologies (Direct Bond Interconnect - DBIreg; technology and die-to-wafer transfer printing technology)to perform intimate sensor to ROIC 3D integration for the detector chiplets and then 2.5D die-to-wafer tiling on a silicon circuit card. Our technologies will allowimproved granularity, reliability, noise, speed and power performance. All, extremely relevant features for NASA.The Phase I development sets the ground work to ensure a successful Phase II outcome as well as helping to ensure the targeted device does in fact fulfill a desirable application. The Phase I results, high level designs, design simulation validation and complete specifications, are vital to guaranteeing the final form, fit and functionality.