QUANTUM SEMICONDUCTOR LLC — Department of Defense SBIR Phase I: N191-008

Description

This project will study the design of a CMOS-based large area light-sensor for LiDAR operation in the blue-green wavelengths via computer simulations. The light-sensor comprises SiGeC photo-diodes that are especially suited for sensing the blue-green portion of the spectrum and can be monolithically-integrated with CMOS. Photo-absorption and a large noiseless internal gain take place inside the SiGeC photo-diodes, the latter being crucial to provide electric signals well above the noise floor, especially under low light conditions. The novel internal gain mechanism occurs at low voltage which enables electrical compatibility with standard CMOS circuitry. The combination of monolithic integration and voltage-level compatibility is expected to result in light-sensors with superior performance, which is to be confirmed by the proposed simulation work. The simulations will study the impact of different approaches, in terms of CMOS circuitry and the design of the light-sensing area, to achieve the desired goals.