PLASMABILITY LLC — Department of Defense SBIR Phase II: A16-021

Description

The goal of the Phase II program is to demonstrate growth of large-area single-crystal diamond substrates having surface area of 6 cm2 and suitable for electronic device applications. This will represent a major leap in available substrate area, from less than 1 cm2 available today. The technical path will directly follow the work begun in the Phase I program, which is, using our toroidal plasma CVD diamond deposition reactor, start with a single crystal seed and grow a large bulk piece of material through growth in one direction first and then growth in a 90-degree direction subsequently. The finished piece of bulk material can then be laser trimmed and polished and used as a master seed to grow thin wafers with about 1 day of growth. Michigan State University (MSU), our university partner in this effort, will perform all post-bulk growth processing and analysis, including laser cutting, polishing, optical and electron microscopy, and characterization of free hole density, channel Hall mobility, thermal conductivity and surface roughness.