QRONA TECHNOLOGIES LLC — Department of Defense STTR Phase I: N18A-T004

Description

GaN power semiconductors offer a technological breakthrough for improving the performance of power electronics including power density, conversion efficiency, and reliability of power converters. These are the three most critical requirements for military, aerospace and many commercial applications. In this STTR program, Qrona Technologies will collaborate with the University of Central Florida to develop low-cost and high-yield thin-film deposition and wafer transfer technologies to fabricate ultra-low defect III-nitride device structures grown on bulk GaN substrates. The proposed process reclaims and reuses the high quality bulk GaN wafers to achieve low-cost production of reliable GaN power devices with higher performance than the current state-of-the-art for both the government and commercial applications. As a demonstration of the effectiveness of the proposed approach, high current Schottky diodes will be fabricated in the Phase-I and Phase-I Option projects.