RADIATION MONITORING DEVICES, INC. — Department of Defense SBIR Phase I: MDA18-007

Description

The goal of this project is to develop basic semiconductor components (field-effect transistors) that can be deployed in highly radioactive environments, such as nuclear plants, space, radioactive waste storage facilities. Ionizing radiation often has a detrimental influence on the performance of microelectronics components. We propose to develop a prototype microelectronics technology for use in high-radiation environments that will exceed current device performance. Our prototype system will be based on a field-effect transistor and contain custom-engineered metal oxide channel materials. These materials are selected for their exceptional radiation hardness, high dielectric coefficients and the ease of which they could be integrated into current CMOS manufacturing processes. In this Phase I project, we will fabricate carefully-designed devices, and test their resistance to ionizing radiation, including neutron beam, X-rays and gamma-rays, using our in-house sources. We will use this data to provide a path forward for future radiation-hard CMOS components.Approved for Public Release | 18-MDA-9710 (6 Jul 18)