WINCHESTER TECHNOLOGIES LLC — Department of Defense STTR Phase I: N16A-T001

Description

Novel approaches are needed to improve the performance and reduce the size, number and signature of antennas with significantly enhanced efficiency in HF-UHF. It has been shown recently hesitivity, which is able to characterize the performance of the material and categorize the radiation efficiency of magnetodielectric wire antennas; the higher the hesitivity, the higher the attainable antenna efficiency over the frequency range. Further hesitivity improvement by 10 over state of the art is required for magnetic films on ultra-thin carrier substrates since much higher antennas efficiencies are greatly desired. Based on their extensive expertise on RF magnetic film materials and devices, the principal investigators propose to develop a good understanding of hesitivity and bring up the relationship between hesitivity and the well-known magnetic material parameters. Then the PIs will demonstrate new candidate magnetic films with 10 higher hesitivities (5~10107 O/m) on ultra-thin SiO2 carrier films (<10 nm) through sputtering of high quality magnetic/dielectric multilayer films on oxidized Si substrates, and deep reactive ion etch for removing the Si substrates. These proposed magnetic materials with much higher hesitivities on ultra-thin SiO2 carrier films will be applied to wide-band low-profile magnetic toroid and flat dipole antennas with much higher radiation efficiency.