INTEGRA TECHNOLOGIES, INC. — Department of Defense SBIR Phase I: N231-062

Description

Over the last 10 years Integra has developed an innovative 150V GaN/SiC RF pulsed power semiconductor technology ideally suited for high power microwave (HPM) applications.  Integra’s 150V GaN/SiC Technology produces a power density up to 30W/mm which is up to 6 times greater than commercially available 50V GaN. The 150V GaN/SiC Technology is the next generation semiconductor process to Integra’s production released 100V GaN/SiC.  Integra has demonstrated measured single packaged 100V GaN/SiC solid-state power amplifier (SSPA) power levels of 5.5kW at L-band and 2kW at S-Band.  These 100V GaN/SiC power levels represent > 400% improvement over commercially available 50V GaN.  This investigation will focus on four different 150V GaN/SiC SSPA topologies each targeted to extend SSPA performance beyond what’s possible with today’s commercial offerings.  Additionally, Integra proposes an option to accelerate a Phase 2 development timeline and reduce engineering risk by conducting 3 critical thermal measurements which will be essential to validating simulated performance from Phase 1.  The expected results are a radar chart comparing the 4 SSPA topology’s simulated performance which will identify the optimal 150V GaN/SiC SSPA topology capable of meeting the SBIR target specification goals and to lay the ground work for a Phase 2 development to build and demonstrate the optimal SSPA in an HPM system environment.