CREARE LLC — Department of Defense SBIR Phase II: A12-118

Description

Power system upgrades for next generation ground combat vehicles require technology advances such as higher operating temperature, greater power density, and increased functionality.Silicon Carbide (SiC) based power electronic devices offer advantages over silicon devices, especially for high voltage buses, and Creare is currently developing a SiC based 12-channel, +/ 300 VDC High Voltage Power Controller (HVPC) that operates at high power levels and temperatures.Our design uses innovative thermal management to enable operation at very high ambient temperature while maintaining adequately low semiconductor junction temperatures.This approach minimizes size and maximizes lifetime and reliability.During Phase I we demonstrated feasibility with design, analysis, and test of a four-channel prototype.During Phase II we completed development and demonstrated a first generation prototype.The goal of this proposed program is to develop a second generation HVPC that further reduces size, cost, and weight by 50% and achieves a universal electrical and coolant interface to simplify the supply chain.