Cambridge Electronics, Inc. — Department of Defense SBIR Phase II: N121-090

Description

This program aims to develop the technology for a new generation of normally-off GaN power transistors with breakdown voltages of 1000 V and linear current of 50 A. These devices will be fabricated through a combination of novel epitaxial structures and advanced fabrication technologies. Thanks to the very high critical electric field of GaN, in addition to the excellent transport properties of high electron mobility transistors, these devices will show much lower input and output capacitance than the state-of-the-art devices commercially available today, which will allow much higher switching frequencies and lower losses. The device performance will be tested through the fabrication of a power conversion circuit with efficiencies exceeding 90 %.