Ballistic Devices, Inc — Department of Defense SBIR Phase I: A16-039
Ballistic Devices, Inc — SBIR Phase I award from Department of Defense.
- Amount
- $99,999
- Agency
- Department of Defense · Army
- Program / Phase
- SBIR · Phase I
- Topic
- A16-039
- Solicitation
- 2016.1
- NAICS
- —
- Place of performance
- CA
- Period
- 2016-09-14 → 2017-03-13
Description
A novel high capacitance density structure that exceeds 80fF/micron-sq is presented.The design of the system is compatible with modern CMOS technology and will enable a circuit designer to produce high accuracy readout-IC's for IRFPA's.The metal-insulator-metal capacitor utilizes a high-k dielectric system that is within the thermal budget of a CMOS process.Additionally, an enhanced design is suggested that will allow for the capacitance density to exceed 120 fF/micron-sq.This provides a roadmap toward further innovation and extension of the technology beyond IRPFA's.