Novati Technologies Inc. — Department of Defense SBIR Phase I: N153-130

Description

Novati intends to leverage our existing Heterogeneous Integration expertise, along with 2.5 and 3D Direct Bond Interconnect (DBI) Technology, and broad semiconductor Process Technology developed by Novati and its predecessors in order to achieve a minimum of one million interconnects among a wafer stack of up to five 8-inch wafers of a minimum of three different substrate types (including one silicon). Final products will be demonstrated to meet the Navys DC testing requirements, and Novati offers RF testing as further validation of the performance and reliability of the interconnect technology as well as the ability to scale the manufacturing process while retaining the beneficial reduction in SWAP-C at a yield rate of 99% per the Navy guidelines. Test results will also validate that Novatis selected integration techniques do not impede or degrade device performance. Competing 3D processes require large area exclusions that require valuable die area and result in the disruption of the BEOL interconnect stack of at least one IC layer in a 3D IC. DBI allows for direct connections to be made between ICs as part of the bond process without disrupting and compromising the interconnect stack. With DBI, 3D IC cost is minimized by avoiding design exclusions in the interconnect stack and delivering a vertical interconnections between IC layers in a 3D IC that can scale with the process node.