MONOLITH SEMICONDUCTOR INC — Department of Energy SBIR Phase I: 17b
MONOLITH SEMICONDUCTOR INC — SBIR Phase I award from Department of Energy.
- Amount
- $149,950
- Agency
- Department of Energy
- Program / Phase
- SBIR · Phase I
- Topic
- 17b
- Solicitation
- DE-FOA-0001227
- NAICS
- —
- Place of performance
- TX
- Period
- 2015-06-08 → 2016-03-07
Description
The final objective of the phase 1 and 2 research is to develop cost-effective, automotive qualified, 600V, 100A SiC Schottky diodes for use in traction inverter applications. The phase 1 research will focus on laying the foundation towards understanding the key factors for achieving high yield, high reliability and low costcritical for adoption in the automotive applications. In phase 1 program, 600V, 100A SiC Schottky diodes will be designed and fabricated in a large volume, automotive qualified 150mm Si foundry. The key yield limiters for the large area SiC diodes will be studied and the design/process trade-offs to maximize the yield and lower the cost will be presented. A preliminary reliability assessment will be performed in phase 1 to lay the groundwork for AEC-Q101 qualification in phase 2. A financial analysis that demonstrates the viability of low cost, 600V, 100A diodes via a fabless manufacturing model using 150mm Si foundry will be presented.