Sinmat Inc — Department of Energy SBIR Phase I: 11a

Description

Current gallium nitride bulk substrate finishing process technology yields poor structural quality of surfaces. The current process takes longer time and results in defective surface. The wafering process needs to be improved to achieve high performance GaN devices. A novel rapid, mechanical and chemical mechanical process will be explored to rapidly polish GaN substrates. The process will address the defects in the surface of GaN substrates. The process will reduce the wafering time with low defectivity and yield ultra-smooth substrates. The defect free substrate will increase yield, reduce manufacturing time and cost. The feasibility analysis of novel polishing of GaN and its efficacy will be explored. The improvement in GaN polishing process will be attempted. The GaN substrates will enable advanced devices that can be used in Blue ray laser diode), electrical and hybrid electrical vehicles, PV invertors, general lighting LEDs) and displays HB- LEDS) and high power grids.