Avogy — Department of Defense SBIR Phase I: Avogy has a unique approach to producing vertical GaN-on-GaN power devices that have funda
Avogy — SBIR Phase I award from Department of Defense.
- Amount
- $137,979
- Agency
- Department of Defense · Navy
- Program / Phase
- SBIR · Phase I
- Solicitation
- 2012.2
- NAICS
- —
- Place of performance
- CA
- Period
- 2012-12-11 → 2013-08-23
Description
Avogy has a unique approach to producing vertical GaN-on-GaN power devices that have fundamental advantages over silicon, silicon carbide, and lateral GaN devices. With this SBIR funding, we will demonstrate the feasibility of a normally-off vertical GaN transistor with a blocking voltage over 5000V, a threshold voltage greater than 1V, and specific on-resistance less than 30 mohm-cm2.