Soraa — Department of Energy SBIR Phase I: Soraa will develop a cost-effective technique to manufacture high-quality, high-performanc

Description

Soraa will develop a cost-effective technique to manufacture high-quality, high-performance gallium nitride (GaN) crystal substrates that are better than today’s GaN crystal substrates, which are expensive and prone to defects. Soraa will also develop pathways to large-area GaN substrates that can handle power switch applications. Substrates are thin wafers of semiconducting material needed for power devices like transistors and integrated circuits. If successful, Soraa will produce GaN crystal substrates that have 100 times fewer defects than conventional GaN substrates, cost eight times less, and are three to four times larger in diameter.