XALLENT INC. — Department of Defense SBIR Phase I: SB133-003

Description

To date, there is no known standardized method of determining the origin of fabrication of an IC chip. The problem lies in the numerous parameters that can be used to identify the origin. To resolve this and meet its need, Xallent LLC proposes developing a database of unique device parameters and characteristics that can be used to successfully track the origin of fabrication of an electronic component. This identification process will be streamlined by focusing on distinct parameters such as the charge transport mechanism in transistor channel, induced strain around Shallow Trench Isolation (STI) structures, and dielectric integrity in Metal-Insulator-Metal capacitors. Physical observables such as via and STI etch angle profiles as well as transistor architecture will also be documented. The measurements from a novel multiple tip Scanning Probe System, invented and constructed by Xallent LLC, capable of performing Atomic Force Microscopy (AFM), Tip Enhanced Raman Spectroscopy (TERS) and Nanoscale-Transconductance characterization, will then be used to evaluate the parameters. As a result, the work done in Phase I will entail the first time an integrated system is used for sequential atomic imaging, TERS and Nanoscale-Transconductance measurement in ambient air without the assistance of a Scanning Electron Microscope (SEM).