Cambridge Electronics, Inc. — Department of Defense SBIR Phase I: Cambridge Electronics will develop a new generation of power electronic switches based on
Cambridge Electronics, Inc. — SBIR Phase I award from Department of Defense.
- Amount
- $150,000
- Agency
- Department of Defense · Navy
- Program / Phase
- SBIR · Phase I
- Solicitation
- 2012.1
- NAICS
- —
- Place of performance
- MA
- Period
- 2012-05-07 → 2013-09-06
Description
Cambridge Electronics will develop a new generation of power electronic switches based on gallium nitride (GaN) semiconductors. These switches will be optimized for 1000-V operation and switching frequencies in excess of 1 MHz. To maximize the device performance, this project will demonstrate a new fabrication technology that significantly increases the breakdown voltage of GaN transistors and reduces their leakage current and on resistance. The threshold voltage of these devices will be in excess of 1 V.