GMATEK — Department of Defense SBIR Phase I: This project involves research and development of an instrument capable of rapidly disting

GMATEK — SBIR Phase I award from Department of Defense.

Amount
$100,000
Agency
Department of Defense · Missile Defense Agency
Program / Phase
SBIR · Phase I
Solicitation
2012.2
NAICS
Place of performance
MD
Period
2013-02-12 → 2013-08-12

Description

This project involves research and development of an instrument capable of rapidly distinguishing between counterfeit and authentic semiconductor components. A side benefit is that it can also identify failed semiconductors. Non-contact measurement techniques are used to acquire electromagnetic field emissions generated by all electronic components that are powered-up and stimulated. Counterfeit semiconductors can be detected due to counterfeiting methods and processes that result in measurable differences in internal electronic signals, crosstalk characteristics and electromagnetic field emissions as compared to authentic semiconductors. Testing merely requires the operator to install the suspect component in a socket, select the appropriate part number, and initiate the test. Test results, available in seconds, indicate either"authentic","counterfeit"or"failed"within a given range of probability as electromagnetic fields emitted by the suspect component are measured, analyzed, and compared against the electromagnetic emission model of the authentic semiconductor. Hundreds of components could be tested each hour if necessary.