ACREE TECHNOLOGIES INCORPORATED — Department of Defense SBIR Phase I: This purpose of this project is to develop high-k dielectrics and processes suitable for u

Description

This purpose of this project is to develop high-k dielectrics and processes suitable for use in Metal-Insulator-Metal capacitors for incorporation into GaN Monolithic Microwave Integrated Circuits. An energetic deposition process will be used that has been demonstrated to produce high quality, high-k films ideally suited for this application. The proposed deposition process is superior to other Physical Vapor Deposition (PVD) processes and to Atomic Layer Deposition. This deposition process allows virtually any arbitrary metal oxide to be easily deposited with high quality allowing different high-k dielectrics to be straightforwardly evaluated. The coatings have high adhesion, are pin-hole and defect free, and contain no impurities from the deposition process. Acree Technologies Incorporated"s experience in the development of innovative coating processes makes us uniquely suited for the successful realization of the desired film, process and equipment for integration into existing foundries.