AGILTRON, INC. — Department of Defense SBIR Phase I: A laser Q-Switch with a low drive voltage and low insertion loss is needed. Today"s e
AGILTRON, INC. — SBIR Phase I award from Department of Defense.
- Amount
- $88,722
- Agency
- Department of Defense · Army
- Program / Phase
- SBIR · Phase I
- Solicitation
- 2012.1
- NAICS
- —
- Place of performance
- MA
- Period
- 2012-07-26
Description
A laser Q-Switch with a low drive voltage and low insertion loss is needed. Today"s electro-optic crystal Q-switch requires high voltage, and the saturable absorber passive Q-switch introduces significant losses in the cavity. Agiltron, Inc., an experienced manufacturer of MEMS chips and MEMS based optical switches, proposes to develop a new MEMS-based laser Q-switch which is compact, ruggedized and only needs less than 200 V drive voltage. The design will be the first MEMS laser Q- switch optimized specifically to meet the requirements for use in designation, marking, and range-finding, and will possess properties of reliability, miniature size, low optical loss, and resistance to shock and can work over a temperature range of -40 to +60 degrees Celsius. Three advances in Agiltron switch technology will be combined to achieve these goals, including a new MEMS actuation mechanism, vast experience in laser systems, and qualified packaging. The MEMS Q-switch will be modeled and fabricated in Phase I. And 20 optimized Q-switch modulators will be built and delivered in Phase II.