KYMA TECHNOLOGIES, INC. — Department of Defense SBIR Phase I: In this proposal, we build on demonstrated expertise in Bulk GaN growth (Kyma Technologies

Description

In this proposal, we build on demonstrated expertise in Bulk GaN growth (Kyma Technologies), High Indium Mole Fraction InGaN and quaternary AlInGaN growth (NCSU- Salah Bedair), device fabrication and characterization (NCSU- John Muth), Optical Photopumping (ARMDEC- Henry Everitt) and expertise in underwater optical communications (NCSU- John Muth) to assemble a very strong Industrial/University team with a history of working together. Kyma Technologies is a world leader in the production of bulk GaN substrates, including non-polar substrates, and the team has the ability to grow high In mole fraction InGaN as well as quaternary AlInGaN on these substrates. We have demonstrated ability in characterizing the optical gain (via photopumping), making refractive index and waveguide loss measurements (via prism coupling), as well as structural measurements (x-ray and TEM) to assess crystal quality. We have expertise in thermal management and laser testing. As part of this Phase I program we will (1) Demonstrate growth of high quality, high In mole fraction InGaN layers on bulk GaN. (2) Measure the optical and electrical properties of these layers. (3) Examine designs capable of delivering>1 Watt of optical power at 518nm with better than 5% wall plug efficiency and (4) fabricate broad area stripe lasers.