MP Technologies, LLC — Department of Defense SBIR Phase II: Recent development of Antimonide-based Type-II superlattice infrared detectors has resulte

Description

Recent development of Antimonide-based Type-II superlattice infrared detectors has resulted in significant breakthroughs in terms of device performance as well as FPA imaging quality. Improvement in material quality and processing technique, as well as evolutionary modifications in device architecture have demonstrated the advantages of the material system over alternatives, and proven it as a viable candidate for the next generation infrared imaging. Yet, the performance of this material system has not fully reached its limits. In this project, we propose to build upon the gap-engineering capability of Type-II superlattices to develop FPAs based on a novel quantum device architecture called Minority Electron Unipolar Photodetector (MEUP). The design is a hybrid between conventional photoconductive and photovoltaic detectors and benefits from the advantages of both configurations. The novel device architecture is expected to achieve high quantum efficiency while decreasing the dark current and the associated shot-noise. Material growth will be realized on 3"GaSb substrates and optimized for the highest quality and best uniformity across the wafer. Applying it to LWIR FPAs in this Phase II, it is expected to achieve a quantum efficiency above 60% and a dark current density below 1uA/cm^2 at operating temperatures higher than 65 K.