QMAGIQ LLC — Department of Defense SBIR Phase II: In Phase I we developed a novel infrared photodiode based on Type-II InAs/GaSb strained la
QMAGIQ LLC — SBIR Phase II award from Department of Defense.
- Amount
- $1,000,000
- Agency
- Department of Defense · Missile Defense Agency
- Program / Phase
- SBIR · Phase II
- Solicitation
- 2010.3
- NAICS
- —
- Place of performance
- NH
- Period
- 2012-09-18
Description
In Phase I we developed a novel infrared photodiode based on Type-II InAs/GaSb strained layer superlattices (SLS) that showed pingpong dualband action, wherein the spectral response of the diode was switched between extended midwave (~ 8 micron cutoff) and longwave (~ 10 micron cutoff) infrared by the polarity of the voltage bias applied across it. In Phase II we will improve quantum efficiency in each band, minimize spectral crosstalk, fabricate 640x512 focal plane arrays with high uniformity and pixel operability, and integrate and deliver a compact portable camera with a pluggable sensor cartridge. The plug-and-play camera will enable DOD to field-test this new dualband sensor technology for missile defense applications.