SDPHOTONICS LLC — Department of Defense STTR Phase I: High quality laser materials based on InP, InGaAs, InAlGaAs, and InAs are proposed to deve
SDPHOTONICS LLC — STTR Phase I award from Department of Defense.
- Amount
- $80,000
- Agency
- Department of Defense · Navy
- Program / Phase
- STTR · Phase I
- Solicitation
- 2012.A
- NAICS
- —
- Place of performance
- FL
- Period
- 2012-08-15
Description
High quality laser materials based on InP, InGaAs, InAlGaAs, and InAs are proposed to develope high power 3 to 3.5 m diode lasers. An adiabatically broadened amplifying section is proposed to reach high power with high beam quality. The active material uses strained layer epitaxy to rely only on high quality laser materials that can be grown by molecular beam epitaxy, and with high quality on InP substrates. Highly strained active layer can lead to rapid commercial production because of compatibility with existing military suppliers of diode laser epitaxy.