SVT ASSOCIATES INC — National Aeronautics and Space Administration SBIR Phase I: Recently, resonant-tunneling-diode (RTD) based circuits employing monolithically-integrate
SVT ASSOCIATES INC — SBIR Phase I award from National Aeronautics and Space Administration.
- Amount
- $96,891
- Agency
- National Aeronautics and Space Administration
- Program / Phase
- SBIR · Phase I
- NAICS
- —
- Place of performance
- MN
- Period
- 2012-02-13 → 2012-08-13
Description
Recently, resonant-tunneling-diode (RTD) based circuits employing monolithically-integrated RTD on high electron mobility (HEMT) structures have been developed in a number of III-V systems in order to improve operational speed. The main goal of this program is to develop wide temperature-operable radiation hard monolithically-integrated electronics based on wide bandgap III-nitride epitaxial structures. In the Phase I program, we propose to develop same-wafer discrete devices (capacitors, HEMTs, and RTDs) by employing a novel multi-layer AlN/GaN heterostructure design, and to demonstrate the radiation hardness of these devices