nLight Photonics — Department of Defense SBIR Phase I: nLight proposes a novel semiconductor laser device operating at ~976 nm with a spatially s
nLight Photonics — SBIR Phase I award from Department of Defense.
- Amount
- $99,943
- Agency
- Department of Defense · Defense Advanced Research Projects Agency
- Program / Phase
- SBIR · Phase I
- Solicitation
- 2012.2
- NAICS
- —
- Place of performance
- WA
- Period
- 2012-11-19
Description
nLight proposes a novel semiconductor laser device operating at ~976 nm with a spatially single mode laser that is separately addressable to generate a few hundred milliwatts of power and then subsequently amplified to>10 watts with a separate electrical contact in a larger gain area while preserving the beam quality resulting in>1000 MW/cm2-Sr. We expect electrical-to-optical power conversion efficiency of>55% by using Super High Efficiency Diode Sources (SHEDS) design. We will also develop a concept for packaging these devices in nLight"s Gen-2 Pearl module.