INTELLIGENT EPITAXY TECHNOLOGY, INC. — Department of Defense SBIR Phase I: This Phase I SBIR effort will seek to develop high performance superlattice infrared focal

INTELLIGENT EPITAXY TECHNOLOGY, INC. — SBIR Phase I award from Department of Defense.

Amount
$100,000
Agency
Department of Defense · Missile Defense Agency
Program / Phase
SBIR · Phase I
Solicitation
2010.3
NAICS
Place of performance
TX
Period
2011-08-01

Description

This Phase I SBIR effort will seek to develop high performance superlattice infrared focal plane array technology by establishing a 4"GaSb substrate manufacturing line based in Texas. Under this program, IntelliEPI proposes to develop 4"GaSb crystal pulling capability based on the vertical gradient freeze method. In addition, a double-side polishing capacity for GaSb up to 4"in diameter will be established. This will provide a supply of high-quality, large diameter substrates to support epitaxial growth development.