Privatran, LLC — Department of Defense SBIR Phase II: PrivaTran proposes the use of newly-developed manufacturing methods that convert materials

Description

PrivaTran proposes the use of newly-developed manufacturing methods that convert materials commonly found in conventional integrated circuit (IC) manufacturing into memristor devices with increased packing density and an advanced, three-dimensional (3D) architecture. The memristor devices can be formed in the interconnect layers of a conventional IC so that the area available for underlying transistors is not affected. This approach results in a 3D architecture achieved using a single substrate without the need for bonding multiple die together with flip-chip or through-silicon-via technologies. Furthermore, the memristor devices are much smaller than single transistors for any given technology node, and will scale to smaller dimensions as IC technology continues to progress towards smaller and smaller transistor sizes. The two-terminal memristor devices have numerous advantages including on/off conductance ratios greater than 104, reversible and fast switching, long retention times and immunity to current-induced degradation. In addition, their inherent simplicity makes them highly compatible with Si-based microelectronics technology, leading to a 3D architecture that can be readily transferred into semiconductor products at the most basic, integrated circuit level.