Tahoe RF Semiconductor Inc., — Department of Defense SBIR Phase II: Tahoe RF will design, simulate, fabricate and test a low noise amplifier (LNA) and compani
Tahoe RF Semiconductor Inc., — SBIR Phase II award from Department of Defense.
- Amount
- $748,363
- Agency
- Department of Defense · Defense Microelectronics Activity
- Program / Phase
- SBIR · Phase II
- Solicitation
- 2009.2
- NAICS
- —
- Place of performance
- CA
- Period
- 2011-02-01
Description
Tahoe RF will design, simulate, fabricate and test a low noise amplifier (LNA) and companion power amplifier (PA). The feasibility study for this design was completed during the Phase I activities. The design will be fabricated using a noise improved device models of a 0.25 m silicon-on-sapphire (SOS) process.