AGILTRON, INC. — Department of Defense SBIR Phase II: SB082-014

AGILTRON, INC. — SBIR Phase II award from Department of Defense.

Amount
$749,912
Agency
Department of Defense · Defense Advanced Research Projects Agency
Program / Phase
SBIR · Phase II
Topic
SB082-014
Solicitation
2008.2
NAICS
Place of performance
MA
Period
2010-09-20 → 2012-09-19

Description

Printed integrated circuits (PIC) allow us to take advantage of substrates that otherwise could not be utilized in traditional fabrication techniques. This enables the production of circuits that are transparent, flexible, and conformal, opening a wide range of new applications for large area sensors, integrated/embedded electronics, medical diagnostics, and health monitoring. Leveraging our extensive experience carbon nanotube material process and printing technology, in this program, Agiltron and a research group from University of Illinois at Urbana-Champaign (UIUC) will fabricate low-cost, high-performance SWCNT circuits on plastic substrates. As compared to some other efforts to create transistors using SWCNT emphasizing nanometer scale devices that might compete with Si CMOS, this effort emphasizes technologies that will dramatically improve the state of the art in printed electronics. The main goal of Phase II is to fabricate PICs with high-frequency operation. These PIC’s are based on TFTs constructed of s-SWCNT material for the n- and p-channels, m-SWCNT for the metallic contacts and interconnects, and polymeric gate dielectrics.