AGILTRON, INC. — Department of Defense SBIR Phase II: SB082-014
AGILTRON, INC. — SBIR Phase II award from Department of Defense.
- Amount
- $749,912
- Agency
- Department of Defense · Defense Advanced Research Projects Agency
- Program / Phase
- SBIR · Phase II
- Topic
- SB082-014
- Solicitation
- 2008.2
- NAICS
- —
- Place of performance
- MA
- Period
- 2010-09-20 → 2012-09-19
Description
Printed integrated circuits (PIC) allow us to take advantage of substrates that otherwise could not be utilized in traditional fabrication techniques. This enables the production of circuits that are transparent, flexible, and conformal, opening a wide range of new applications for large area sensors, integrated/embedded electronics, medical diagnostics, and health monitoring. Leveraging our extensive experience carbon nanotube material process and printing technology, in this program, Agiltron and a research group from University of Illinois at Urbana-Champaign (UIUC) will fabricate low-cost, high-performance SWCNT circuits on plastic substrates. As compared to some other efforts to create transistors using SWCNT emphasizing nanometer scale devices that might compete with Si CMOS, this effort emphasizes technologies that will dramatically improve the state of the art in printed electronics. The main goal of Phase II is to fabricate PICs with high-frequency operation. These PIC’s are based on TFTs constructed of s-SWCNT material for the n- and p-channels, m-SWCNT for the metallic contacts and interconnects, and polymeric gate dielectrics.