INTERLOG CORPORATION — Department of Defense SBIR Phase I: N201-071

Description

To address the Navy’s need for a novel ultra-fast metastable implant activation system for selective area doping of III-nitrides, such as gallium nitride (GaN), Interlog proposes to develop a novel Duel-Wavelength Laser Annealing and Activation (DWLA) system. Employing two localized laser heating modules, DWLA readily achieves of HCRs of = 1,000 K/s and >10,000 K/s for steady heating transient heating, respectively. A novel all-solid-state 360 nm ultraviolet laser is used for the steady heating, while a commercial off-the-shelf (COTS) 248 nm excimer laser is adapted for transient heating. The 8-inch sample is placed inside sample-holding cell with a window of UV-transparent fused silica to allow real-time process monitoring and control. Heating uniformity better than 98% is achieved by accurate control of heating time (better than 100 microseconds and 10 nanoseconds for steady and transient heating, respectively). The DWLA is capable of maintaining GaN pristine surface integrity for 3 minutes of cumulative annealing time at 1,300 - 1,400°C. In Phase I Interlog will demonstrate the feasibility of DWLA technology by fabricating and testing a TRL-4 prototype. In Phase II we plan to refine the technology and fabricate an integrated TRL-5 DWLA prototype.