ADROIT MATERIALS, INC. — Department of Defense SBIR Phase I: N161-005

ADROIT MATERIALS, INC. — SBIR Phase I award from Department of Defense.

Amount
$149,999
Agency
Department of Defense · Navy
Program / Phase
SBIR · Phase I
Topic
N161-005
Solicitation
2016.1
NAICS
Place of performance
NC
Period
2016-06-03 → 2017-09-18

Description

The overall objective of the proposed work is to demonstrate the feasibility of electrically pumped, high-efficiency and long-lifetime, near-UV, solid-state laser diodes (LDs) based on AlGaN MQWs grown on native, single crystalline GaN substrates. The targeted laser diodes will emit between 330 - 350 nm with an emission power exceeding 1 W. These lasers will find application in remote Raman spectroscopy applications, non-line of sight communication systems, and laser identification and detection systems. We will use n-type GaN substrates in order to achieve the first vertical AlGaN laser diode emitting in the UV. This configuration will enable more homogenous current injection, higher achievable pumping power, better thermal management, and, as a direct consequence, high output power.