ADROIT MATERIALS, INC. — National Aeronautics and Space Administration SBIR Phase I: S12

Description

The proposed work aims to demonstrate significant improvement in AlGaN-based detectors and detector arrays by employing single crystal AlN substrates, which practically eliminates leakage induced by screw dislocations. By employing defect controlled APDs on single crystal AlN, we aim to demonstrate sensitivity over the whole UVC range (120 - 275 nm) while being solar and visible blind. We will provide APDs and their arrays of varying pixel resolution and pixel size capable of Geiger mode operation and photon counting. The detectors will be capable of elevated temperature operation allowing for extreme environment operations in places such as Venus. In addition, we also aim to demonstrate low dark currents at high linear gains by point defect control. We aim to demonstrate AlGaN-based photon counters with low dark counts and sensitivity only in the UVC range (lt; 275 nm) with solar and visible spectrum rejection, quantum efficiency exceeding 70%, high multiplication gain exceeding E6, and low dark current. During Phase I we will demonstrate Geiger mode operation and photon counting with gt;TRL 3. In a possible Phase II, we will extend our efforts nbsp;and will have achieved TRL 6.