PC KRAUSE & ASSOCIATES INC — Department of Defense SBIR Phase I: A16-088

Description

Recent advances in commercially available Gallium Nitride (GaN) MOSFETS offer significant advantages compared to Silicon devices for a wide range of power conversion applications including the availability of devices in advanced packages, lower on-state resistances, significantly faster switching, and improved performance in harsh electromagnetic environments.To demonstrate these advantages of GaN in military platforms, PCKA proposes to develop hardware to demonstrate the application of commercially available GaN electronic switching devices to reduce the size, weight and power of low-voltage power conversion hardware within the Combat Vehicle Prototype (CVP) Next Generation Power Architecture.It is anticipated that the proposed converter will achieve the target power output capability with reduced size, weight, and cooing requirements compared to a similarly designed Silicon-converter.Further, it is assumed that all of these capabilities shall be met while maintaining or improving upon the safety, efficiency, robustness, and stability requirements that would be essential for a modernized combat vehicle.In the Phase I effort, key aspects of the proposed GaN power converter will be designed and verified through a combination of advanced modeling, simulation, and analysis (MS&A) and hardware prototyping and test to a degree sufficient to warrant transition to a more complete Phase II development effort.