NHANCED SEMICONDUCTORS, INC. — Department of Defense SBIR Phase I: ABSTRACT: Tezzaron proposes to create a microprocessor device based on an ARM M0 processo
NHANCED SEMICONDUCTORS, INC. — SBIR Phase I award from Department of Defense.
- Amount
- $149,611
- Agency
- Department of Defense · Air Force
- Program / Phase
- SBIR · Phase I
- Solicitation
- 2014.1
- NAICS
- —
- Place of performance
- IL
- Period
- 2014-06-20 → 2015-03-02
Description
ABSTRACT: Tezzaron proposes to create a microprocessor device based on an ARM M0 processor designed to be fabricated in the Honeywell S150 Rad-Hard SOI semiconductor process. The device will be designed for both stand alone and 3D circuit integration. In a 3D application the device can be die to wafer or wafer to wafer assembled providing a core set of SOC processor functions. BENEFIT: An ARM M0 processor device that is hardened has broad applicability to the Mil-Aerospace market. The performance of the M0 processor makes it a good candidate for real time flight control and the 3D integration feature can provided unparalleled performance at low power.