SILICON TECHNOLOGIES, INC. — Department of Defense SBIR Phase I: ABSTRACT: Non Volatile Memories (NVM) are necessary for many applications, including sens

Description

ABSTRACT: Non Volatile Memories (NVM) are necessary for many applications, including sensors, hardware based radio station, wireless systems, instrumentation, video, and power. These applications are often used in harsh environments including the medical radiological, nuclear, space, and military markets. These radiation environments magnify the difficulty of designing complex NVMs due to the fact that ionizing radiation and even a single ionizing particles can generate charge in the semiconductor circuit. The radiation can drastically alter the performance of the NVM. For example, the effects of ionizing radiation on MOS transistors can cause SRAM and many types of NVM memory cells to switch states. In addition, it can also cause shifts in the threshold voltage, changes in the gain and a marked increase in the leakage currents which significantly affect the periphery circuits. Silicon Technologies, Inc. (STI) proposes to design and commercialize a high-density, high-performance, Rad Hard Non Volatile Memory (RHNVM) technology to serve space markets. We will review existing NVM literature, evaluate findings, pick a process and technology and incorporate this into existing design tools developed for DARPA contract # W31P4Q-11-C-0046 and an ongoing Air Force contract #FA9453-13-M-0125. Circuit design, layout and simulations will be included for a representative 64 MB RHNVM. BENEFIT: The objective is to create a radiation hardened by design or by process NVM circuit developed in a Trusted process and available to the Air Force and other DOD departments that require NVM either as a standalone chip or as a IP block to be included in their Systems on a Chip. The Air Force will be able to reduce its NRE costs significantly on future SOC programs that require large NVM solutions.