INDIANA MICROELECTRONICS, LLC — Department of Defense SBIR Phase I: This proposal is focused on the development of very wide bandwidth, high efficiency power
INDIANA MICROELECTRONICS, LLC — SBIR Phase I award from Department of Defense.
- Amount
- $79,537
- Agency
- Department of Defense · Navy
- Program / Phase
- SBIR · Phase I
- Solicitation
- 2013.1
- NAICS
- —
- Place of performance
- IN
- Period
- 2013-06-19 → 2013-12-19
Description
This proposal is focused on the development of very wide bandwidth, high efficiency power amplifiers for next generation EW, radar and wireless communication systems. High-Q tunable notch filters, coupled with high efficiency power appliers (PA) will be designed and analyzed. The PA-filter co-design techniques is expected to produce very wide bandwidth, high efficiency power amplifiers with bandwidths greater than 4 to 1 and efficiencies greater than 60 percent across the operating band. A prototype proof-of-concept PA-filter module will be developed for operation from L Band to C Band in the first phase of the project. The concepts developed for the prototype L to C band amplifier will then be applied to higher frequency designs with the goal of extending the concept for high efficiency, very high bandwidth power amplifiers through 110 GHz.