CBRITE Inc — Department of Defense SBIR Phase II: We propose to develop a material, a fabrication process and a device design for MOTFT on p

CBRITE Inc — SBIR Phase II award from Department of Defense.

Amount
$729,869
Agency
Department of Defense · Army
Program / Phase
SBIR · Phase II
Solicitation
2009.2
NAICS
Place of performance
CA
Period
2011-03-17

Description

We propose to develop a material, a fabrication process and a device design for MOTFT on plastic substrates. The key challenge is the adaptation of MOTFT fabrication processes to flexible substrates from that used for glass substrates. The major differences between glass substrates and flexible substrates are survivable temperature treatment, chemical stability and dimension stability. Flexible plastic substrates can"t go above the glass transition temperature and this will place a limit on the fabrication temperature. We have to design a metal oxide and a gate dielectric that can achieve good device performance at the lowest temperature possible. The plastic substrate may not be chemically stable in the fabrication process. We also have to develop a low temperature buffer layer that provides a good chemical stability for the plastic substrates during the MOTFT fabrication process. We also propose to develop a material, a fabrication process and a device design for a photo-detector with the requisite optical and electronic properties. Devices will be fabricated by solution processing utilizing blended hole transport and electron transport semi-conducting polymers and will have photo-response from 400nm to 700nm, high detectivity and high external quantum efficiency.