GENESIC SEMICONDUCTOR INC. — Department of Defense SBIR Phase I: N161-066

Description

This two-phase SBIR program will develop fully-qualified 6500 V/100 A SiC MOSFET based dual-half bridge power modules, targeted for insertion into the next-generation of U.S. NAVY all-electric warships. The proposed SiC MOSFETs will feature breakdown voltages > 6500 V, specific on-resistance < 35 m-cm2, threshold voltage > 2 V, 175C operation, and transition times < 100 ns. The device robustness will be quantified with avalanche energy > 5 J per chip, and short-circuit withstand times > 10 s.<br>Phase I of the program will focus on the device development tasks. This will include optimized epilayer and device design, fabrication and on-wafer characterization. High-temperature and switching characterization will be conducted during the Phase I Option period. A technical feasibility study on the design of the medium-voltage power module is also targeted for the Phase I Option period. ABB Inc. has expressed strong interest in partnering with GeneSiC with their open-standard LinPak platform, which is specifically designed for low-inductance medium-voltage SiC phase-leg modules.<br>Building on the Phase I results, the Phase II program will deliver a fully-qualified 6500 V/100 A dual-half bridge power module to the NAVY program manager, and demonstrate operation at the requisite voltages, currents and junction temperatures.