GENESIC SEMICONDUCTOR INC. — Department of Defense SBIR Phase I: N182-130

Description

Silicon carbide (SiC) based stackable drift step recovery diodes (DSRDs) with 20 kV/1 kA/=1 MHz capability are proposed in this program for potential use in the next-generation of high-power microwave pulse generators of interest to a wide range of commercial and military applications, ranging from ultra-wide band telecommunication systems, short-range local positioning systems, power lasers, ground penetrating radars, pulsed corona processing, particle accelerators and power generators for electric discharge in gases. The novel SiC DSRDs will outperform their Silicon counterparts by virtue of the superior material properties of SiC as compared to Si, mainly higher breakdown field strength, drift velocity and higher thermal conductivity. The fabrication of the proposed SiC DSRDs can be conducted in a high-volume production foundry without the use of exotic high-temperature/long-duration process steps, required for optimum silicon based DSRD realization. By careful control and optimization of the epilayer/device design and processing steps used for device fabrication, the switching and power handling performance of the SiC DSRDs will be optimized. Novel low-inductance packaging solutions will be explored for creating > 20 kV SiC DSRD stacks with superior thermal/electrical performance for high (= 1 MHz) repetition rates