GENESIC SEMICONDUCTOR INC. — Department of Energy SBIR Phase I: 06b

Description

Power electronics for Grid-tied Battery Energy Storage Systems (BESS) featuring: (a) newly developed monolithically integrated High Voltage SiC MOSFET- Schottky Diodes; (b) Intelligent Gate Drivers that provide in-situ monitoring and restoration capabilities; and (c) novel three level Neutral point clamping topology are proposed. An isolated topology such as dual active bridge followed by an active front end converter and a three-level neutral point clamped topology featuring 3300 Volt rated medium-voltage silicon carbide MOSFETs with integrated Schottky diodes is proposed. An intelligent MV gate driver will minimize the problems of voltage isolation for series connected device topologies. Phase I will perform a comprehensive evaluation of various BESS and grid connected PCS topologies, and quantify SiC MOSFET device stresses and required thermal management, quantify SiC MOSFET lifetime based on standard lifetime and reliability models, and compare losses with Si-IGBT implementation and defining the merits of proposed SiC MOSFET based PCS for ESS.The 400 kW all-SiC power inverters to be developed in this program will significantly improve the performance and decrease the size/weight/footprint of 12.47 kV energy storage grid-tied inverters, FACTS-based devices, and power system switchgear. Industrial applications such as electrostatic precipitators, and oil drilling equipment. This in turn will increase market acceptance of these high-end products and thereby drive skilled-labor jobs creation in the US.