OSEMI INC — Department of Defense SBIR Phase I: MDA22-005
OSEMI INC — SBIR Phase I award from Department of Defense.
Phase I SBIR feasibility signal
- Phase I awards fund proof-of-concept work. For capture teams, they mark early interest from Department of Defense in a technical approach.
- Watch for Phase II follow-ons from the same firm/topic family — that conversion path is where budgets and transition pressure rise.
- Obligated amount $147,250. Cross-check similar awards in the same agency and technology tags for going-rate context.
- Topic code MDA22-005 links this award to a solicitation family — search the same topic stem for incumbents and recompete timing.
- Amount
- $147,250
- Agency
- Department of Defense · Missile Defense Agency
- Program / Phase
- SBIR · Phase I
- Topic
- MDA22-005
- Solicitation
- 22.1
- NAICS
- —
- Place of performance
- MN
- Period
- 2022-07-25 → 2023-01-24
Description
The low growth temperature enabled by molecular beam epitaxy (MBE) is known to be useful in generating cubic crystalline nitride-based semiconductors. In 2011 Novikov applied the MBE growth technique to achieve free-standing cubic gallium nitride (GaN) templates up to 75 microns thick with a 50mm diameter using standard 1 micron per hour growth rates. In this Phase I effort, OSEMI proposes to apply High Speed MBE growth to the prototyping cubic Boron Nitride (c-BN) templates and free standing substrates. The initial extended MBE growths will be attempted at the 50mm wafer diameter. The goal of the Phase II effort will be to scale the growth technology to 100-200mm diameter template and/or achieve free-standing c-BN substrate wafers to be sold as a product to enable further device development and production by US companies across optoelectronics and extreme environment electronics sectors. Approved for Public Release | 22-MDA-11215 (27 Jul 22)