PSEUDOLITHIC INC. — Department of Defense SBIR Phase II: N211-086
PSEUDOLITHIC INC. — SBIR Phase II award from Department of Defense.
Phase II SBIR prototype / development signal
- Phase II is where Department of Defense funds deeper R&D after feasibility. Incumbents with Phase II history are serious competitors on adjacent topics.
- Use this award as past-performance context and to map customer organizations for STRATFI/TACFI-style transition planning.
- Obligated amount $1,488,112 is consistent with substantial Phase II-scale effort; compare to related awards from the same agency.
- Topic code N211-086 links this award to a solicitation family — search the same topic stem for incumbents and recompete timing.
- Amount
- $1,488,112
- Agency
- Department of Defense · Defense Advanced Research Projects Agency
- Program / Phase
- SBIR · Phase II
- Topic
- N211-086
- Solicitation
- 21.1
- NAICS
- —
- Place of performance
- CA
- Period
- 2022-08-01 → 2024-02-29
Description
PseudolithIC, Inc. is pleased to offer this proposal to develop and deliver superior Ka-band performance enabled by recent advances in N-polar Gallium Nitride (GaN) in a cost-effective integration platform that readily extends to a complete mm-Wave phased array solution. PseudolithIC was founded as the world’s first company committed to the commercialization of heterogeneous semiconductor integration as a new approach to radio-frequency integrated circuits (RFICs). PseudolithIC plans to offer this disruptive technology to the growing RF and millimeter-wave marketplace which is limited today between the scalability but limited performance of RF CMOS processes and the cost but limited integration of compound semiconductors such as Gallium Nitride (GaN). The PseudolithIC approach is ideally suited to rapidly demonstrating the performance advantages of a new device technology such as N-polar GaN and then quickly scaling that technology to manufacturing readiness. Our proposal will demonstrate how an emergent merchant foundry developing a heterogeneous integration process with capability to operate in millimeter-wave bands in combination with commercial Ga-polar GaN technology can be scaled to silicon manufacturing levels and deliver outstanding mm-Wave array performance at an affordable cost. Pseudolithic will characterize transmit and receive chain element performance as well as develop a complete packaging design for an integrated phased array.