AGNITRON TECHNOLOGY, INC. — Department of Defense SBIR Phase I: N182-134
AGNITRON TECHNOLOGY, INC. — SBIR Phase I award from Department of Defense.
- Amount
- $124,986
- Agency
- Department of Defense · Navy
- Program / Phase
- SBIR · Phase I
- Topic
- N182-134
- Solicitation
- 18.2
- NAICS
- —
- Place of performance
- MN
- Period
- 2018-10-15 → 2020-01-30
Description
Future DoD and Navy missions require advances in current high voltage power electronics technology. In this proposed effort, Agnitron will investigate the limitations of existing MOCVD technology and propose solutions towards an MOCVD system for Gallium Nitride capable of growth rates over 10um per hour at pressures from low to super atmospheric. The goal is to achieve low background concentrations under these conditions as well as demonstrate heavily doped p+ and n+ (Al)GaN layers <50nm thick. At the end of this program we will establish a plan for optimizing the growth process as well as reactor configuration to meet the objectives of the Phase I program.