CAPORUS TECHNOLOGIES INC — Department of Energy SBIR Phase II: C53-33c

Description

C53-33c-271423Active pixel sensors have been developed and implemented in a wide array of applications, including image sensors for cameras, sensors for medical imaging, and as detectors for nuclear physics investigations with the Relativistic Heavy Ion Collider and the Large Hadron Collider. Many of these applications, including nuclear physics detectors, medical imaging sensors, and sensors for aerospace and defense applications, must have improved radiation hardness against upset or damage. Caporus is developing a new type of silicon-on-insulator substrate for radiation hardness and high frequency performance for active pixel sensors. The unique properties of these substrates will improve active pixel sensors by increasing radiation hardness, improving sensitivity, and reducing charge accumulation. Following demonstration of the feasibility of fabricating a new type of silicon-on- insulator substrate in phase I, the next phase will focus on scaling of the substrates for CMOS processing, device fabrication, and testing for radiation hardness. Caporus is partnering with Fermi National Accelerator Laboratory for the device design, irradiation and testing, and a US-based foundry will perform foundry fabrication services. After this development program, Caporus will provide a new substrate platform on which end-users can build active pixel sensors and a multitude of other devices. Caporus’ new substrates will provide enabling capabilities for applications that require radiation hardness and/or RF performance. By working with customers and US-based foundries, the substrates will be a platform for innovation in science, defense, transportation, and communications.